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Typical Performance Characteristics (Continued)
1.2
3.0
2.5
1.1
2.0
1.0
1.5
0.9
※ Notes :
1. V GS = 0 V
2. I D = 250 μ A
1.0
0.5
※ Notes :
1. V GS = 10 V
2. I D = 47 A
0.8
-100
-50
0
50
100
150
200
0.0
-100
-50
0
50
100
150
200
T J , Junction Temperature [ C]
T J , Junction Temperature [ C]
o
Figure 7. Breakdown Voltage Variation
vs. Temperature
o
Figure 8. On-Resistance Variation
vs. Temperature
50
Operation in This Area
10
2
is Limited by R DS(on)
100 us
40
1 ms
10
10
1
0
DC
10 ms
30
20
※ Notes :
10
1. T C = 25 C
2. T J = 150 C
-1
o
o
3. Single Pulse
10
10
10
10
10
10
-2
0
1
2
3
0
25
50
75
100
125
150
V DS , Drain-Source Voltage [V]
Figure 9. Safe Operating Area
D = 0 .5
T C , Case Temperature [ ℃ ]
Figure 10. Maximum Drain Current
vs. Case Temperature
10
-1
0 .2
0 .1
0 .0 5
※ N o te s :
1 . Z θ J C ( t) = 0 .3 ℃ /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)
P DM
10
-2
0 .0 2
0 .0 1
s in g le p u ls e
t 1
t 2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q t 1 u , Rectangular Pulse Duration [sec] n [s e c ]
a r e W a v e P u ls e D u r a tio
Figure 11. Transient Thermal Response Curve
?2009 Fairchild Semiconductor Corporation
FCH47N60 Rev. C2
4
www.fairchildsemi.com
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